APPLICATIONS
The manufacturing process of semiconductors involves preparing silicon wafers, growing silicon dioxide layers through oxidation, and using photolithography to create circuit patterns. Chemical or plasma etching defines these patterns, while doping introduces impurities with gases like phosphine and boron trifluoride to modify electrical properties. Deposition processes use gases such as silane and ammonia to add silicon-based and nitride films. Metallization adds metal layers, often with argon in sputtering processes, and the finished wafers are sliced into individual chips. These key gases play a crucial role in creating precise layers and ensuring semiconductor performance and reliability.
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Industrial gases are crucial in various stages of semiconductor manufacturing, including wafer production, deposition, etching, doping, and cleaning processes. They help in creating the desired chemical reactions and maintaining the purity and quality of semiconductor materials.
Common gases include nitrogen (N₂), oxygen (O₂), hydrogen (H₂), argon (Ar), helium (He), silane (SiH₄), phosphine (PH₃), ammonia (NH₃), and various fluorinated gases such as sulfur hexafluoride (SF₆) and tetrafluoromethane (CF₄).
Nitrogen is used for purging and inerting to prevent oxidation and contamination during various manufacturing steps. It is also used as a carrier gas in chemical vapor deposition (CVD) and as a cooling medium.
Oxygen is used in oxidation processes to create silicon dioxide layers on silicon wafers. It is also involved in plasma etching and cleaning processes to remove unwanted materials from the wafer surface.
Hydrogen is used in annealing processes to passivate defects in silicon wafers, improving their electrical properties. It is also a component in some chemical vapor deposition (CVD) processes.
Industrial gases play a critical role in ensuring high-quality manufacturing processes. Proper use of gases can improve process efficiency, reduce defects, and increase the yield of functional semiconductor devices.
Ammonia (NH₃) is used in the deposition of silicon nitride (SiNx) layers through plasma-enhanced chemical vapor deposition (PECVD). These layers serve as insulating and passivation layers, improving device performance and longevity.
The quality of industrial gases is ensured through stringent purity standards, regular monitoring, and advanced purification technologies. High-purity gases are essential to prevent contamination and ensure the performance and reliability of semiconductor devices.
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